Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
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Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect
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Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC
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On Practical Charge Injection at the Metal/Organic Semiconductor Interface
![Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator](https://europepmc.org/articles/PMC6990641/bin/ao9b04011_0003.jpg)
Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC
![Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator](https://ars.els-cdn.com/content/image/1-s2.0-S2772949422000109-gr1.jpg)
Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect
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Effect of the electron mobility of the top semiconductor electrode on
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Oxygen Effect on the Properties of Epitaxial (110) La0.7Sr0.3MnO3 by Defect Engineering
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Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
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Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect
![Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator](https://europepmc.org/articles/PMC7283246/bin/41598_2020_66339_Fig3_HTML.jpg)
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory. - Abstract - Europe PMC
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